ROHM Semiconductor and Taiwan Semiconductor Manufacturing Company (TSMC) have announced a strategic partnership focused on the development and mass production of gallium nitride (GaN) power devices specifically designed for the electric vehicle (EV) market. This collaboration leverages ROHM’s extensive experience in device development and TSMC’s cutting-edge GaN-on-silicon process technology.
Table Content:
Combining Expertise for GaN Power Solutions
The partnership aims to address the increasing demand for high-voltage, high-frequency power devices within the rapidly expanding EV sector. GaN technology offers significant advantages over traditional silicon-based solutions, enabling smaller, more efficient power systems. This collaboration builds upon a pre-existing relationship between the two companies, including ROHM’s 2023 adoption of TSMC’s 650V GaN high-electron mobility transistors (HEMTs) for their EcoGaN series.
GaN’s Role in EV Advancement
Already utilized in consumer electronics and industrial applications like AC adapters and power supplies, GaN power devices are poised to play a critical role in advancing EV technology. Onboard chargers and inverters, essential components for EV operation, stand to benefit significantly from the efficiency and size reductions offered by GaN. TSMC’s commitment to environmentally responsible manufacturing aligns with the inherent sustainability benefits of GaN technology, making it a particularly attractive solution for the automotive industry’s increasing focus on reducing carbon emissions.
Driving GaN Adoption in the Automotive Industry
Katsumi Azuma, Senior Managing Executive Officer and Member of the Board at ROHM, emphasized the importance of GaN devices in achieving a decarbonized society. He highlighted the potential for miniaturization and energy savings offered by high-frequency operation and expressed confidence in TSMC’s advanced manufacturing capabilities. Beyond the partnership, ROHM plans to facilitate wider GaN adoption in the automotive sector by providing comprehensive solutions that include control ICs designed to optimize GaN performance.
A Joint Effort for Next-Generation GaN Technology
Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC, confirmed the expansion of their collaboration with ROHM to encompass GaN power devices for automotive applications. He stated that by combining TSMC’s manufacturing expertise with ROHM’s power device design proficiency, they aim to push the boundaries of GaN technology and accelerate its implementation in EVs. This joint effort signals a significant step towards wider adoption of GaN technology in the automotive industry and underscores the commitment of both companies to innovation in the EV space.
Conclusion: Powering the Future of Electric Vehicles
The strategic partnership between ROHM and TSMC represents a significant development in the advancement of GaN technology for electric vehicles. By leveraging their respective strengths, the two companies are poised to deliver innovative GaN power solutions that will contribute to more efficient, sustainable, and high-performance EVs. This collaboration promises to accelerate the evolution of the EV market and pave the way for a greener automotive future.
